93LC66B The 93AA66 is a 4K-bit Low-voltage Serial Electrically Erasable Prom Memory With an Org Pin Selectable Memory Configuration of X 8-bits or. bit organization (93LC66B) x16bits (93LC66B). .. Please specify which device, revision of silicon and Data Sheet (include Literature #) you are. 93LC66B datasheet, 93LC66B circuit, 93LC66B data sheet: MICROCHIP – 4K Microwire Compatible Serial EEPROM,alldatasheet, datasheet, Datasheet.
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The higher the current sourcing capability of A0, the higher the voltage at the Data Out pin. As soon as CS is high, the device is no longer in the standby mode.
93LC66B Datasheet(PDF) – Microchip Technology
After execution of an instruction i. This gives the controlling master freedom in preparing opcode, address, and data. All other trademarks mentioned herein are the property of their respective companies. This is a stress rating only and functional operation of the device at those or 993lc66b other conditions above those indicated in the operational listings of this specication is not implied.
4K Microwire Compatible Serial EEPROM
During power-down, the source data protection circuitry acts to inhibit all programming modes when Vcc has fatasheet below 2. Chandler, AZ Tel: Your local Microchip sales ofce. This falling edge of the CS pin initiates the self-timed programming cycle. Data bits are also clocked out on the positive edge of CLK.
However, a programming cycle which is already in progress will be completed, regardless of the Chip Select CS input signal. These clock cycles are required to clock in all required opcode, address, and data bits before an instruction is executed Table and Table CS is brought low following the loading of the last address bit.
This application is not tested but guaranteed by characterization. After power-up, the device is automatically in the EWDS mode. To determine if an errata sheet exists for a particular device, please contact one of the following: Advanced CMOS technology makes these devices ideal for low power nonvolatile memory applications.
The memory data will automatically cycle to the next register and output sequentially. Exposure to maximum rating conditions for extended periods may affect device reliability. After the last data bit is put on the DI pin, the falling edge of CS initiates the self-timed autoerase and programming cycle.
M Preliminary Information contained in this publication regarding device applications and the like is intended for suggestion only and may be superseded by updates. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise.
During power-up, all programming modes of operation are inhibited until VCC has reached a level greater than 2. Opcode, address, and data bits are clocked in on the positive edge of CLK.
If CS is brought low during a program cycle, the device will go into standby mode as soon as the programming cycle is completed. An instruction following a START condition will only be executed if the required amount of opcodes, addresses, and data bits for any particular instruction is clocked in. Under such a condition the voltage level seen at Data Out is undened and will depend upon the relative impedances of Data Out and the signal source driving A0.
93LC66B 데이터시트(PDF) – Microchip Technology
If CS is high, but a START condition has not been detected, any number of clock cycles can be received by the device datashet changing its status i. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights.
A high level selects the device; a low level deselects the device and forces it into standby mode. Sequential read is possible when CS is held high.
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